Farnell starts shipping Nexperia power GaN FETS
11 September 2020
Farnell has announced that it is now shipping Nexperia’s Power Gallium Nitride (GaN) FET range.
GaN FET products deliver improved density and efficient power usage in a small form factor, enabling the development of more efficient systems and are seen as providing the potential to transform power performance in electric vehicles, 5G communications, IoT and more.
This range from Nexperia provides solutions to design engineers as increased legislation, and the growing need to reduce Co2 emissions, drive a significant shift to more efficient power conversion and increased electrification.
According to Nexperia, GaN technology helps to overcome many of the limitations of existing technologies, such as silicon based IGBTs and SiC, to deliver direct and indirect performance benefits to a whole range of power conversion applications. Within electric vehicles, GaN technology directly reduces power losses that can impact the range of a vehicle. More efficient power conversion also reduces the need for cooling systems to dissipate generated heat, reducing the vehicle’s weight and system complexity, in turn leading to a longer operating range or the same range with a smaller battery. Power GaN FETs are also well positioned for applications in data centres, telecom infrastructures, and industrial applications.
GaN FETs are able to deliver superior levels of performance in solutions such as hard switching for AC-DC Totem pole PFC applications, LLC phase shift full-bridge (resonant or fixed frequency) for soft-switching applications, All DC-AC inverter topologies and AC-AC matrix converters using bidirectional switches.
Commenting Lee Turner, Global Head of Semiconductors and SBC, Farnell said: “We are pleased to further support our customers with the addition of the power GaN FETs to the Farnell range. GaN technology is at the cutting edge of efficient power design and these new products will be a key component to innovative IoT, automotive and communication designs of the future.”
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